据TheElec，三星电子最早将在今年3月停止在华城园区12号生产线制造2D NAND闪存，该企业的2D NAND闪存时代也将随之正式结束。三星电子早在2013年就实现了3D NAND (V-NAND) 的量产，不过三星还是保留了小规模的2D NAND产能以应对特殊利基市场的需求。华城12号生产线未来将服务于1c nm DRAM内存制造，负责后端的金属布线和表面处理工艺。（财联社）
Daniel Adams, Usdaw's national officer, said: "It remains incredibly disappointing that, while the company still performs strongly, it continues to make decisions like this.
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It might not sound a lot, but for every 1C temperature rise our atmosphere can hold 7% more moisture – this can create heavier rainfall.
从之前泄露的跑分来看，这颗芯片终于在光追和综合性能上重新站回了可以和高通正面掰手腕的擂台上。，这一点在爱思助手下载最新版本中也有详细论述